
IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
9
V DS = 500V
10us
8
7
6
I D = 3.0A
I G = 10mA
10 Limited by R DS(on)
100us
1ms
5
4
3
2
1
0
1
0.1
10ms
100ms
0
10
20
30
40
50
60
70
80
1
10
100
1000
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
V DS - Volts
Fig.10 Source Current vs. Source
to Drain Voltage
2750
2500
2250
2000
1750
1500
C iss
f = 1 MHz
V DS = 25V
9
8
7
6
5
1250
1000
750
500
250
0
C oss
C rss
4
3
2
1
0
T J = 125°C
T J = 25°C
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V CE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single Pulse
0.001
V DS - Volts
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
? 2000 IXYS All rights reserved
4-4